IPU20N03L G

IPD20N03L IPU20N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V •Logic Level RDS(on) 20 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 P- TO252 -3-11 •Superior thermal resistance •175°C operating temperature •Avalanche rated •dv/dt rated •Ideal for fast switching buck converters Type Package Ordering Code Marking IPD20N03L P- TO252 -3-11 Q67042-S4050 20N03L IPU20N03L P- TO251 -3-1 Q67042-S4106 20N03L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Value Unit A 30 TC=25°C 30 Pulsed drain current ID puls 120 TC=25°C EAS 15 Repetitive avalanche energy, limited by Tjmax 2) EAR 6 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 60 W Avalanche energy, single pulse mJ ID=15A, V DD=25V, RGS=25Ω kV/µs IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 -55... +175 °C 55/175/56 Page 1 06-09-2005 IPD20N03L IPU20N03L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 1.7 2.5 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 cooling area 3) - - 50 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS=0V, I D=1mA Gate threshold voltage, V GS = VDS ID=25µA Zero gate voltage drain current µA IDSS VDS=30V, V GS=0V, T j=25°C - 0.01 1 VDS=30V, V GS=0V, T j=125°C - 10 100 IGSS - 1 100 nA RDS(on) - 22.9 31 mΩ RDS(on) - 15.5 20 Gate-source leakage current VGS=20V, VDS=0V Drain-source on-state resistance VGS=4.5V, ID=15A Drain-source on-state resistance VGS=10V, ID=15A 1Current limited by bondwire ; with an RthJC = 2.5K/W the chip is able to carry I D= 42A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 06-09-2005 IPD20N03L IPU20N03L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 14 28 - S pF Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max , ID=30A Input capacitance Ciss VGS=0V, VDS =25V, - 530 700 Output capacitance Coss f=1MHz - 200 275 Reverse transfer capacitance Crss - 60 90 Gate resistance RG - 1.3 - Ω Turn-on delay time t d(on) VDD=15V, VGS=10V, - 6.2 9.3 ns Rise time tr ID=15A, - 11 17 - 23 34 - 18 27 - 2.5 3.1 - 6.4 9.6 - 8.4 11 - 8 10 Turn-off delay time t d(off) Fall time tf RG =12.7Ω Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg VDD=15V, ID=15A VDD=15V, ID=15A, nC VGS=0 to 5V Output charge Q oss VDS=15V, ID =15A, nC VGS=0V Gate plateau voltage V(plateau) VDD=15V, ID=15A - 3.6 - V IS TC=25°C - - 30 A - - 120 Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF =30A - 1.1 1.4 V Reverse recovery time trr VR =15V, IF =lS , - 15 18 ns Reverse recovery charge Qrr diF /dt=100A/µs - 2 3 nC Page 3 06-09-2005 IPD20N03L IPU20N03L 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (TC) parameter: VGS≥ 10 V 65 IPD20N03L 32 IPD20N03L W A 55 50 24 ID P tot 45 40 20 35 16 30 25 12 20 8 15 10 4 5 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) ZthJC = f (tp) parameter : D = 0 , T C = 25 °C parameter : D = tp/T 10 3 10 1 IPD20N03L IPD20N03L K/W A 10 0 V DS ID /I D 10 ZthJC tp = 35.0µs 2 10 -1 DS (on ) = 100 µs R D = 0.50 10 10 -2 0.20 1 0.10 0.05 1 ms 0.02 10 -3 0.01 10 ms single pulse DC 10 0 10 -1 10 0 10 1 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s tp VDS Page 4 06-09-2005 10 0 IPD20N03L IPU20N03L 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=25°C parameter: t p = 80 µs RDS(on) = f (ID) A IPD20N03L Ptot = 60W 65 VGS [V] a 3.0 hg f 60 55 ID IPD20N03L mΩ e 50 45 d 40 35 b 3.5 c 4.0 d 4.5 e 5.0 f 6.0 g 7.0 h 10.0 c d e 55 50 RDS(on) 75 parameter: VGS 45 40 35 30 30 25 f 25 20 c 20 g h 15 15 10 b 10 5 5 VGS [V] = c 4.0 d 4.5 e f 5.0 6.0 10 20 g h 7.0 10.0 a 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 30 40 A 50 65 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS ≥ 2 x ID x R DS(on)max gfs = f(ID); Tj=25°C parameter: t p = 80 µs parameter: gfs 60 30 A S 50 40 gfs ID 45 20 35 30 15 25 20 10 15 10 5 5 0 0 1 2 3 4 5.5 V VGS Page 5 0 0 5 10 15 20 30 A ID 06-09-2005 IPD20N03L IPU20N03L 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 15 A, V GS = 10 V parameter: VGS = VDS 50 IPD20N03L 3 mΩ V V GS(th) RDS(on) 40 35 30 25 0.868mA 2 1.5 98% 20 typ 1 15 25µA 10 0.5 5 0 -60 -20 20 60 100 °C 140 0 -60 200 -20 20 60 100 180 °C Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 pF IPD20N03L A 10 3 10 2 C IF Ciss Coss 10 2 10 1 Crss Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 15 20 30 V 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V VSD VDS Page 6 06-09-2005 3 IPD20N03L IPU20N03L 13 Typ. avalanche energy 15 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) par.: I D = 15 A, V DD = 25 V, RGS = 25 Ω parameter: I D=10 mA 36 16 V V(BR)DSS mJ 12 E AS IPD20N03L 10 34 33 32 8 31 6 30 4 29 2 28 0 25 45 65 85 105 125 145 °C 185 Tj 27 -60 -20 20 60 100 140 °C Tj 14 Typ. gate charge VGS = f (Q Gate) parameter: I D = 15 A pulsed 16 IPD20N03L V VGS 12 10 0.2 VDS max 8 0.5 V DS max 0.8 VDS max 6 4 2 0 0 2 4 6 8 10 12 14 16 18 nC 21 Q Gate Page 7 06-09-2005 200 IPD20N03L IPU20N03L TO-252-3-1 Package outline Page 8 06-09-2005 IPD20N03L IPU20N03L PG-TO-251-3 Page 9 06-09-2005 IPD20N03L IPU20N03L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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